Professor Yuan Taur
Jacobs Hall, Room 3801
The field of electronic devices and materials includes the synthesis, characterization, and application of metals, semiconductors and dielectric materials in solid state electronic and opto-electronic devices. It encompasses the fabrication, characterization and modeling of prototype electronic materials, devices and integrated circuits based on silicon and III-V compound semiconductors, as well as processing methods employed in present-day and projected integrated circuits. Current research includes:
- Growth by molecular beam epitaxy and chemical vapor phase epitaxy
- Metallurgical aspects of interfaces
- The electronic, optical, and electro-optic properties of heterostructures
- The study of superconductors and magnetic materials
Research thrusts cover the study of ultrasmall structures (nanotechnology) as well as ultrahigh speed transistors and optoelectronic devices. The department has available a complete facility for fabricating prototype silicon and III-V compound transistors and other devices, electron-beam lithography, a Rutherford backscattering facility, molecular beam and organo-metallic vapor-phase epitaxy, cryogenic temperature facilities, scanning tunneling microscopes, microwave and mm-wave measurement facilities, as well as auxiliary apparatus for x-ray, optical, and galvanomagnetic characterization of materials, devices and components.