Applied Physics - Electronic Devices and Materials

Curriculum Advisor

Professor Yuan Taur
Jacobs Hall, Room 3801
(858) 534-3816


The field of electronic devices and materials includes the synthesis, characterization, and application of metals, semiconductors and dielectric materials in solid state electronic and opto-electronic devices. It encompasses the fabrication, characterization and modeling of prototype electronic materials, devices and integrated circuits based on silicon and III-V compound semiconductors, as well as processing methods employed in present-day and projected integrated circuits. Current research includes:

  • Growth by molecular beam epitaxy and chemical vapor phase epitaxy
  • Metallurgical aspects of interfaces
  • The electronic, optical, and electro-optic properties of heterostructures
  • The study of superconductors and magnetic materials

Research thrusts cover the study of ultrasmall structures (nanotechnology) as well as ultrahigh speed transistors and optoelectronic devices. The department has available a complete facility for fabricating prototype silicon and III-V compound transistors and other devices, electron-beam lithography, a Rutherford backscattering facility, molecular beam and organo-metallic vapor-phase epitaxy, cryogenic temperature facilities, scanning tunneling microscopes, microwave and mm-wave measurement facilities, as well as auxiliary apparatus for x-ray, optical, and galvanomagnetic characterization of materials, devices and components.


Applied Physics - Electronic Devices and Materials - Course Requirements