Jacobs Hall, Room 2512, Jacobs School of Engineering, 9500 Gilman Dr, La Jolla, San Diego, California 92093
Wide bandgap materials have attracted great interest in the research and development of power electronic devices for energy conversion. GaN is a promising candidate material because of its high-frequency operation and high breakdown field. Progress in the development of GaN power devices has been significant over the last twenty years. This talk will review the MBE and MOCVD epitaxy for nitride semiconductors and cover the different challenges existing in the epitaxy for both lateral and vertical GaN power devices. HRL’s development of vertical GaN-on-GaN Schottky diode and transistors will be discussed as an example. Some recent results of non-polar GaN epitaxy on (010) Ga2O3 substrates will also be shared at the end of the talk.
Yu Cao received the Ph.D degree in Electrical Engineering at the University of Notre Dame in 2010. His research interests include MBE growth of GaN, GaN RF devices fabrication, charge transport theory, etc. After graduation he joined the Kopin Corporation in MA, which was later acquired by IQE. As a staff scientist, he focused on MOCVD epitaxy development of GaN-on-Si HEMTs for RF and power applications, as well as GaAs-based HBTs, BiHEMTs and pHEMTs for power amplifier applications. In 2014 He joined HRL Lab. He is currently a Research Staff Scientist, working on the epitaxy and devices application of vertical GaN transistors. He is a senior member of IEEE, and has authored and co-authored 3 books/book chapter, more than 100 peer-reviewed journal and conference papers.
Jacobs Hall, Room 2903